氮化镓功率半导体器件技术
Gallium Nitride Power Semiconductor Devices Technology
摘要 作为第三代半导体材料的典型代表,宽禁带半导体氮化镓(GaN)具有许多硅材料所不具备的优异性能,是高频、高压、高温和大功率应用的优良半导体材料,在民用和军事领域具有广阔的应用前景.随着GaN技术的进步,特别是大直径硅(Si)基GaN外延技术的逐步成熟并商用化,GaN功率半导体技术有望成为高性能低成本功率技术解决方案,从而受到国际著名半导体厂商和研究单位的关注.总结了GaN功率半导体器件的最新研究,并对GaN功率器件发展所涉及的器件击穿机理与耐压优化、器件物理与模型、电流崩塌效应、工艺技术以及材料发展等问题进行了分析与概述.
Abstract:
Gallium Nitride (GaN) is an attractive wide bandgap semiconductor for high-voltage, high-temperature, high-frequency, high-power applications because of its favorable material characteristics. With the development of the large-diameter GaN epiwafers based on silicon substrate, GaN-based power devices are promising candidates for the low-cost, high-efficiency power management solution. In this paper, the state-of-the art GaN-based power devices are summarized and some issues on GaN-based power devices and technologies, such as breakdown mechanisms and optimizations, device physics and models, current collapse, GaN-based materials, are analyzed and presented in detail.
Author: ZHANG Bo CHEN Wanjun DENG Xiaochuan WANG Zhigang LI Zhaoji
作者单位: 电子科技大学电子薄膜与集成器件国家重点实验室,成都,610054
年,卷(期): 2010, 30(1)
分类号: TN304.2 TN305
机标分类号: TN3 TP3
在线出版日期: 2010年5月17日