锗杂质对直拉单晶硅热施主和机械强度的影响
The Effect of Ge on Oxygen Donor Behavior and Mechanical Strength in CZSi
摘要 利用四探针测试和三点弯曲法研究了掺入等价元素Ge的CZSi 450℃退火时晶体电学参数稳定性和硅片机械强度.发现Ge能抑制CZSi中氧施主的形成,降低热施主的形成速率和最大浓度,改善硅材料的内在质量,提高硅片的机械强度,以杂质量级掺入到硅中的Ge对提高硅材料的综合性能是有益的.
Abstract:
The effects of Ge on oxygen donor behavior in CZSi and mechanical strength of CZSi slice were examined by measurement of using Four-Point probe and Three-Point warping stress instrument.The results indicated that sfter Ge doped in CZSi,thermal stability of CZSi at 450 ℃ annealing had been risen,concentration of thermal donor had been reduced,mechanical strength and material quality cna achieve improvement largely.Thus,doping Ge in CZSi is a way of developing new function material .
Author: ZHANG Wei-lian SUN Jun-sheng TAN Bai-mei LI Jia-xi
作者单位: 河北工业大学 半导体材料研究所,
刊 名 河北工业大学学报 ISTICPKU
年,卷(期): 2001, 30(2)
分类号: TN304.2
机标分类号: V25 TN3
在线出版日期: 2004年1月8日
基金项目: 河北省科研项目