Thermoelectric Properties of Czochralski GeSi Crystal
Abstract:
In order to discuss the application possibility of SiGe crystal in thermoelectric materials, we investigated the thermoelectric properties of several silicon-germanium alloys with different content, orientation and electric conductive type. As discussed in the experiment result, the absolute value of Seebeck coefficient fluctuates from 300 to 600 μV/K in the whole temperature range. In the present paper, the relationship of Seebeck coefficient against content, orientation and electric conductive type is summarized in detail. The Seebeck coefficient of the sample with 〈111〉orientation is smaller than that in 〈100〉 at the same temperature. Absolute value of P-type is larger than that of N-type except pure Ge. But as the temperature increases, the absolute value of pure Ge decreases many times as quickly as that of other specimens. In addition, the specimens of bulk GeSi alloy crystals for experiment were grown by the Czochralski method through varying the pulling rate during the growing process.
Author: SUO Kai-Nan ZHANG Wei-Lian LI Jian ZHAO Jia-Peng ZHOU Zi-Peng
作者单位: Semiconductor Material Institute,Hebei University of Technology, Tianjin 300130, China;The 46th Research Institute CETC, Tianjin 300220, China Semiconductor Material Institute,Hebei University of Technology, Tianjin 300130, China The 46th Research Institute CETC, Tianjin 300220, China
刊 名 结构化学 ISTICSCI
年,卷(期): 2007, 26(10)
分类号: O6
机标分类号: O61 TG1
在线出版日期: 2007年12月10日
基金项目: 河北省自然科学基金