溅射气压对碳硅氧薄膜透过率及光学带隙的影响
Effect of Sputtering Pressure on Transmittance and Optical Band Gap of Silicon Oxycarbide Thin Films
摘要 采用射频磁控溅射技术在玻璃基底和单晶硅片(100)上制备了碳硅氧(SiOC)薄膜,通过扫描电镜、X射线衍射、拉曼光谱、X射线光电子能谱及紫外可见透射光谱等技术手段对其进行了分析,研究了在不同溅射气压下所制备薄膜的组分、透过率及光学带隙.结果表明:随着溅射气压的增大,薄膜内部sp3键含量、透过率及光学带隙均随之增大,sp3键及其形成的宽带隙σ键对薄膜光学带隙有着较大影响.在溅射气压为3.0 Pa的条件下,薄膜光学带隙为2.67 eV.
Abstract:
Silicon oxycarbide (SiOC) thin films were fabricated on Si (100) and glass substrates by radio frequency (RF) magnetron sputtering technique.They were also characterized by scanning electron microscope (SEM), X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy as well as UV-Vis spectroscopy.The component, transmittance and optical band gap of the films deposited under different sputtering pressures were also studied.The results show inside of thin films, the component of sp3 band, transmittance and optical band gap both increase follow the sputtering pressure's increase.The sp3 band and its wide gap σ band have a great influence on the optical band gap of films which is 2.67 eV when the sputtering pressure equal 3.0 Pa.
Author: FENG Jian JIANG Hong MA Yan-ping NA Cong WANG Qi
作者单位: 海南大学材料与化工学院,海口 570228;南海海洋资源利用国家重点实验室,海口 570228;海南省特种玻璃重点实验室,海口 570228 海南中航特玻科技有限公司,澄迈,571924
刊 名 人工晶体学报 ISTICEIPKU
年,卷(期): 2017, 46(8)
分类号: TB34
在线出版日期: 2017年9月30日
基金项目: 国家自然科学基金,国家重点研发计划项目,海南省重点研发计划项目