Determination of Ge content in high concentration Ge-doped Czochralski Si single crystals by FTIR
SiGe single crystals with different Ge concentrations were measured by Fourier transform infrared (FTIR) spectroscopy at room temperature (RT) and 10 K. A new peak appears at the wave number of 710 cm-1 and the spectroscopy becomes clearer with an increase in Ge content. The absorption strength and wave sharp of the 710 cm-1 peak are independent of temperature. The relation of the absorption coefficient amax, the band width of half maximum (BWHM) W1/2 of the 710 cm-1 peak, and the Ge concentration is determined with the Ge content obtained by SEM-EDX. The conversion factor is k = 1.211 at 10 K. Therefore, the Ge content in high concentration Ge doped CZ-Si single crystals can be determined by FTIR.
Author: JIANG Zhongwei ZHANG Weilian NIU Xinhuan
作者单位: Institute of Information Functional Materials, Hebei University of Technology, Tianjin 300130, China
年,卷(期): 2005, 24(3)
分类号: TG1
机标分类号: TQ3 V2
在线出版日期: 2005年12月1日
基金项目: 国家自然科学基金,河北省自然科学基金