电子回旋共振等离子体中TMG的离解氢对气相沉积氮化镓薄膜的影响
Dissociated Hydrogen and GaN Growth by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition
摘要 氢在GaN薄膜制备工艺中扮演很重要的角色,氢主要有两个来源,一是载气氢,另一个来源是从TMG气源本身离解出来的氢产物.本文研究了电子回旋共振-等离子体增强化学气相沉积(ECR-PECVD)沉积GaN薄膜工艺中从TMG离解出来的氢产物及其对薄膜生长环境的影响.实验分别采用N2和TMG作为N源和Ga源,衬底为(0001)面α-Al2O3.实验的结果表明从TMG中离解出来的氢产物的数量会随着微波功率的增加而增加,特别是当微波功率大于500 W时离解氢的数量增加更明显,但是这种增加还不足以改变PECVD沉积GaN薄膜过程中本来的富镓生长环境.
Abstract:
The GaN thin films weresynthesized at a low temperature by electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD) on (0001) sapphire (α-Al2O3) with trimethyl-gallium (TMG) as the sources of Ga,N and H.The impact of the growth conditions,including but not limited to the microwave power,flow rates of H2 and N2,TMG decomposition,and especially the concentration of dissociated H,on the stoichiometry of GaN was experimentally investigated with optical spectroscopy and X-ray photoelectron spectroscopy.As the microwave power increased,the concentration of dissociated H was found to increase slowly.The results show that thesignificant increase of the concentration of dissociated H (at a high microwave power of 500 W) little affected the growth of Ga-rich GaN thin films.
Author: Fu Silie Wang Chunan Ding Luocheng Qin Yingxin
作者单位: 广东省量子调控工程与材料重点实验室,华南师范大学物理与电信工程学院 广州,510006 广东技术师范学院电子与信息工程学院 广州 510665
刊 名 真空科学与技术学报 ISTICEIPKU
年,卷(期): 2017, 37(4)
分类号: O539
基金项目: 国家自然科学基金项目,广东省自然科学基金项目