有机分子PTCDA在P型Si单晶(100)晶面的生长机理
Growing Mechanism of Organic Molecule PTCDA at P-type Si Single Crystal(100) Crystal Face
摘要 对PTCDA的分子结构及其化学键的形成进行了分析,并讨论了晶面指数(100)Si单晶的晶格结构.在此基础上,评述了PTCDA分子在P-Si单晶(100)晶面上生长的机理,并制备了样品PTCDA/P-Si(100).利用XRD对样品测试得出,在P-Si(100)晶面上沉积的PTCDA薄膜中仅存在α物相.利用XPS对样品测试得出,在其界面层中PTCDA酸酐中的4个羟基O原子与C原子结合,其结合能为532.4 eV;苝核基团外围的8个C、H原子以共价键结合,其结合能为289.0 eV;在界面处,悬挂键上的Si原子与PTCDA酸酐中的C、O原子结合,形成C—Si—O键及C—Si键,构成了界面层的稳定结构.
Abstract:
The molecular structure and the formation of chemical bonds of organic semiconductor materials PTCDA were analyzed, and the lattice structure of crystal plane index (100)Si single crys-tal was discussed. On this basis, the mechanism of the growth of PTCDA molecules on the crystal surface of P-Si single crystal ( 100 ) was reviewed, and the sample PTCDA/P-Si ( 100 ) was pre-pared. X-ray diffraction ( XRD ) measurement shows that there are only α-PTCDA phases in the P-Si(100) pace. XPS test shows that the four hydroxyl O atoms in the acid anhydride of PTCDA molecular are covalently bound to the C atom in the interface layer, and the binding energy is 532. 4 eV;the eight C and H atoms covalently bind in the periphery of perylene nuclear group, and the binding energy is 289. 0 eV. At the interface, Si atoms with 2s and 2p electrons on the surface state danglingbond are bound to the C and O atoms in the acid anhydride of PTCDA molecular to form a C—Si—O bond and C—Si bond, thereby constructing a stable structure of interfacial molecules.
作者: 张旭 张杰 张福甲
Author: ZHANG Xu ZHANG Jie ZHANG Fu-jia
作者单位: 兰州文理学院 电子信息工程学院,甘肃 兰州,730000 兰州大学 物理科学与技术学院,甘肃 兰州,730000
刊 名 发光学报 ISTICEIPKU
年,卷(期): 2018, 39(6)
分类号: TN305.93
在线出版日期: 2018年7月2日
基金项目: 国家自然科学基金,甘肃省自然科学基金(145RJZA071)资助项目Supported by National Natural Science Foundation of China,National Natural Science Foundation of Gan-su Province