固态源分子束外延法生长InGaP/GaAs异质结构的热力学分析
Thermodynamic Analysis of InGaP/GaAs Heterostructures Grown by Solid-source Molecular Beam Epitaxy
摘要 本文建立了采用分子束外延法制备InGaP/GaAs异质结构的热力学模型,其中考虑了两个重要的因素,由晶格失配引起的内在应力和InP的脱附.所得到的模型与现有实验结果匹配较好.该模型的实验结果表明在InGaP的生长过程中,生长温度,In/Ga束流比及合金组分之间的相互关系,同时也与实验数据相吻合.该模型对于其他气相沉积生长方式也具有一定的适用性.
Abstract:
A thermodynamic model for molecular beam epitaxy(MBE) growth of InGaP/GaAs heterostructures was established that considers two key factors, intrinsic strain due to the lattice mismatch and the desorption of InP. The derivation of the model is presented as well as comparisons with existing experimental data. The calculation results of this model indicated that the interactions among growth temperature, In/Ga flux ratio and alloy composition during the growth of InGaP which accord with the experimental data. The model is also available for other vapor deposition methods.
Author: CAO Xue SHU Yong-chun YE Zhi-cheng PI Biao YAO Jiang-hong XING Xiao-dong XU Jing-jun
作者单位: 南开大学弱光非线性光子学材料先进技术及制备教育部重点实验室,天津,300457
刊 名 人工晶体学报 ISTICEIPKU
年,卷(期): 2010, 39(6)
分类号: O484
机标分类号: TN3 O48
在线出版日期: 2011年3月23日
基金项目: National High Technology Research and Development Program of China,Natural Science Foundation of Tianjin, China