Ⅲ-V族三元化合物半导体材料分子束外延的生长热力学
Thermodynamic analysis of growth of ternary III-V semiconductor materials by molecular-beam epitaxy
摘要 建立Ⅲ-V族三元化合物半导体材料的分子束外延生长热力学模型.该模型与实验材料InGaP/GaAs, InGaAs/InP 及已发表的GaAsP/GaAs, InAsP/InP 的数据吻合得很好.将晶格应变能ΔG及脱附对温度敏感这两个因素同时纳入热力学模型中,束流和生长温度直接影响合金组分,晶格应变能是合金组分的函数.热力学模型计算结果反映了束流和生长温度是生长过程中最主要的影响因素.讨论和分析了四元半导体材料InGaAsP/GaAs的热力学生长模型.
Abstract:
Thermodynamic models for molecular-beam epitaxy (MBE) growth of ternary Ⅲ-V semiconductor materials are proposed. These models are in agreement with our experimental materials InGaP/GaAs and InGaAs/InP, and reported GaAsP/GaAs and InAsP/InP in thermodynamic growth. The lattice strain energy ΔG and thermal decomposition sensitive to growth temperature are demonstrated in the models simultaneously. ΔG is the function of the alloy composition, which is affected by flux ratio and growth temperature directly. The calculation results reveal that flux ratio and growth temperature mainly influence the growth process. Thermodynamic model of quaternary InGaAsP/GaAs semiconductor material is discussed also.
Author: YE Zhi-cheng SHU Yong-chun CAO Xue GONG Liang PI Biao YAO Jiang-hong XING Xiao-dong XU Jing-jun
作者单位: 南开大学,弱光非线性光子学教育部重点实验室,天津,300457
年,卷(期): 2011, 21(1)
分类号: TG1
机标分类号: TN3 TQ1
在线出版日期: 2011年5月3日
基金项目: Applied Basic Study Foundation of Tianjin, China,the Hi-tech Research and Development Program of China