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  • [外文期刊] S.Tashiro A.Osonoi 《Journal of the Ceramic Society of Japan》, ISTIC EI SCI PKU CSSCI 1999 1
    BaTiO3 semiconducting ceramics were fired according to areduction-reoxidation method, and a fraction of the Ba ions werecomplexly substituted with both Ca and (Sr0.5Pb0.5). the effectsof the complex su...
    半导体材料陶瓷烧成还原电极
  • [外文期刊] A. Memon D. B. Tanner 《Journal of Materials Science》, ISTIC EI SCI PKU CSSCI 1999 16
    The reflectivity spectra of semiconducting Bi4-xRxSr3Ca3Cu2O10 glasses were measured over the frequency rangebetween 100 and 4000 cm-1 , and were analysed using Kramer-Kronig routines. It is observed t...
    semiconductingBi4-xRxSr3Ca3Cu2O10physical propertiesdielectric properties半导体材料铋铜氧系介电性质物理性质
  • [外文期刊] M. R. Aguiar R. Caram 《Journal of Materials Science》, ISTIC EI SCI PKU CSSCI 1999 18
    As the Sn-Se eutectic solidification produces alamellar structure, formed by SnSe and SnSe2 compound, whichare p and n semiconducting type, respectively, the SnSe-SnSe2 insitu composite is a promising ...
    SnSe-SnSe2 compositesmicrostructural半导体材料锡合金碲合金显微结构
  • [外文期刊] M. S. Sadigov M. Ozkan 《Journal of Materials Science》, ISTIC EI SCI PKU CSSCI 1999 18
    Thin films of copper indium diselenide (CuInSe2)were prepared by selenization of CuInSe2-Cu-In multilayeredstructure on glass substrate. The selenization procedure wascarried out in a vapour of element...
    thin filmssemiconductorsCuInSn2太阳能电池吸收薄膜CuInSn2半导体材料
  • [外文期刊] K. R. Murali V. SUbramanian 《Journal of Materials Science》, ISTIC EI SCI PKU CSSCI 1999 14
    CdSeTe semiconducting material was synthesizedfor the first time by a chemical method using selenium andtellurium with cadmium oxide in the presence of reducingatmosphere. Hexagonal mono phase CdSeTe p...
    semicondueting compoundspowderCdSeTe半导体材料粉末性能CdSeTe
  • [外文期刊] K.Wieteska W.Wierzchowski 《Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics》, ISTIC EI SCI PKU CSSCI 1999 1/2
    The synchrotron Laue method with a beam limitedby a pin hole was applied for studying the implanted layers insilicon and in AIIIB v multicompound epitaxial layers. Asignificant difference between the m...
    ImplantationSiliconAIIIBv semiconductorLaue methodPin-hole limited beam半导体材料离子注入
  • [外文期刊] W.Wierzchowski K.Wieteska 《Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics》, ISTIC EI SCI PKU CSSCI 1999 1/2
    The MOCVD grown Al 0.45 Ga0.55As epitaxiallayers with low dislocation density, implanted with 1.5 MeV Se+ions to the doses 6×10 13-4×10 14 ions/cm2, were studied using amulticrystal arrangement and app...
    Ion implantationAIIIBv semiconductorsX-ray interference phenomena半导体材料离子注入干涉
  • [外文期刊] J.Domagala M.Leszczynski 《Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics》, ISTIC EI SCI PKU CSSCI 1999 1/2
    In this article, we present a study on strainrelaxation in AlxGa1-x layers grown by molecular beam epitaxy(MBE) and metalorganic chemical vapor deposition (MOCVD) onthe bulk GaN single crystals (lattic...
    Wide band gap semiconductorsAlGaNX-ray reflectivityX-ray diffraction半导体材料X射线衍射分析外延生长
  • [外文期刊] J.B.Misiuk J.Adamczewska 《Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics》, ISTIC EI SCI PKU CSSCI 1999 1/2
    Influence of high pressure-high temperaturetreatment on structural properties of AlGaAsIGaAs structures wasstudied by high resolution x-ray diffractometry andphotoluminescence techniques. The treatment...
    SemiconductorsX-ray diffractionDefect structureHigh-pressure treatment半导体材料X射线衍射分析缺陷高压静水压影响
  • [外文期刊] M.Leszczynski P.Prystawko 《Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics》, ISTIC EI SCI PKU CSSCI 1999 1/2
    Lattice parameters of gallium nitride weremeasured using diffraction of X-rays produced by the laboratorygenerators and the European Synchrotron Radiation Facility(ESRF). The following samples were exa...
    SemiconductorsX-ray diffractionGallium nitrideLattice parameters半导体材料X射线衍射分析氮化物晶格常数外延生长
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