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半导体学报（英文版）
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2026年9期
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Low-noise InGaAs/InP single-photon diodes with 30%detection efficiency and 0.1 kcps dark count rate
Low-noise InGaAs/InP single-photon diodes with 30%detection efficiency and 0.1 kcps dark count rate
摘要
InGaAs/InP single photon diodes(SPADs)are widely used in quantum communication systems.The dark count rate(DCR),which describes the noise level,is one of the most important parameters of SPAD performance.Here,we demonstrate the technology computer-aided design and experimental test of low DCR InGaAs/InP SPAD to be applicable to the fiber quan-tum key distribution system under high-frequency gating.In order to achieve a lower DCR at higher operating temperature,the device structure is optimized by increasing the doping concentration of the charge layer and expanding the width of the multiplier layer.At the same time,the charge persistence effect is limited by optimizing the double Zn diffusion process.The results show that our InGaAs/InP SPAD can achieve an extremely low DCR of 0.1 kcps,30%photon detection efficiency and 4.7%afterpluse probability at an operating frequency of 1.25 GHz,an operation temperature of 213 K and an excess bias volt-age of 4.6 V.
年，卷(期)：
2026, 47(9)
机标分类号：
TN215
TP393.08
TN3
在线出版日期：
2026年10月12日
