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半导体学报（英文版）
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2026年9期
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Plasma-induced bond evolution enables low-temperature fabrication of dense SiNx barriers for high-reliability phase-change memory
Plasma-induced bond evolution enables low-temperature fabrication of dense SiNx barriers for high-reliability phase-change memory
摘要
The thermal sensitivity of phase-change memory(PCM)poses a stringent thermal budget for back-end encapsula-tion,demanding high-performance diffusion barriers processable at low temperatures.Conventional low-temperature silicon nitride(SiNx)films,however,are typically porous and prone to oxidation due to abundant metastable Si-H/N-H bonds.Herein,we propose an in-situ plasma cycling strategy that reconstructs the bonding network of plasma-enhanced chemical vapor depo-sition(PECVD)SiNx at a record-low temperature of 200 ℃.Through controlled Ar/N2 plasma exposure,we cleave metastable bonds and reorganize into a continuous Si-N network,achieving a near-theoretical density of 3.4 g/cm3(a 61.9%increase)and a 143.8%enhancement in Si-N bonding proportion.The resulting 40-nm barrier effectively suppresses Te/O interdiffusion,reduces wet-etch rate by～67%,and maintains thermal confinement within 1.6%deviation.Integrated into PCM devices,this bar-rier yields a 98.7%SET/RESET operation yield and a 1.4-fold wider resistance window.This work not only provides a reliable encapsulation solution for PCM but also establishes a generalizable plasma-mediated interfacial engineering approach for advanced electronic devices under thermal constraints.
年，卷(期)：
2026, 47(9)
机标分类号：
G633.410.2
H31
TP391
在线出版日期：
2026年10月12日
