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半导体学报（英文版）
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2026年9期
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Bias-selectable LWIR dual-band photodetector based on InAs/GaSb type-Ⅱ superlattice
Bias-selectable LWIR dual-band photodetector based on InAs/GaSb type-Ⅱ superlattice
摘要
Dual-band photodetectors represent one of the important development directions of the third-generation focal plane photodetectors.Type Ⅱ superlattice(T2SL)has emerged as a promising candidate for fabricating long-wavelength dual-band or multi-band infrared photodetectors due to its merits including engineerable band gap,low manufacturing cost and excellent uniformity.In this work,a long/long-wavelength dual-band photodetector with an NMπP-B-PπMN structure based on InAs/GaSb T2SL is reported.The cutoff wavelengths of the two bands are 7.8 and 11.2 μm,respectively.At 77 K,the short long-wavelength channel exhibits a peak quantum efficiency of 20.19%,a peak detectivity of 1.26×1010 Jones and dark current den-sity of 0.91×10-2 A/cm2;the long long-wavelength channel achieves a peak quantum efficiency of 28.94%,a peak detectivity of 7.36×109 Jones and dark current density of 6.03×10-2 A/cm2.The device demonstrates high performance,laying a solid foundation for the fabrication of long/long-wavelength dual-band focal plane photodetectors.
年，卷(期)：
2026, 47(9)
机标分类号：
TN304.23
O471.1
TN215
在线出版日期：
2026年10月12日
