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半导体学报（英文版）
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2026年9期
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Reconfigurable Schottky-barriers in 2D photodiodes via room-temperature Ozone treatment
Reconfigurable Schottky-barriers in 2D photodiodes via room-temperature Ozone treatment
摘要
The integration of two-dimensional(2D)semiconductors with mainstream complementary metal-oxide-semiconduc-tor(CMOS)technology is hampered by the limited ability to adjust device performance after fabrication.Here,we present a dif-ferential Schottky-barrier tuning strategy to post-customize the optoelectronic performance based on a two-dimensional asym-metric Schottky contact WSe2 photodiode,eliminating the need for device re-fabrication.A brief,room-temperature ozone expo-sure(1.5 min)enables in-situ tuning of the rectification ratio across three orders of magnitude(from 102 to 105)and enhances the peak responsivity at 532 nm by 11.2 times.These effects stem from differential modulation of Schottky barrier height(SBH)at the asymmetric contacts.While the SBH at the WSe2/Au interface is reduced,the SBH at the WSe2/graphene junction is ele-vated,a phenomenon unlocked by the combination of oxidation-induced Fermi-level lowering in WSe2 and interfacial dipole modification.Our method establishes a"device-after-design"paradigm for 2D material engineering,providing a CMOS-compati-ble and versatile route toward adaptive optoelectronics for applications in wearable sensing and reconfigurable photonic sys-tems.
年，卷(期)：
2026, 47(9)
机标分类号：
TN23
TN31
TB34
在线出版日期：
2026年10月12日
