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半导体学报（英文版）
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2026年9期
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Research on the critical thickness of Al0.2Ga0.8N template grown on AlN/sapphire substrate
Research on the critical thickness of Al0.2Ga0.8N template grown on AlN/sapphire substrate
摘要
AlGaN-based ultraviolet(UV)laser diodes(LDs),with emission wavelength in the 280-365 nm range,are promising for applications in medical diagnostics and biological sensing,making them a prominent research focus in both academia and industry in recent years.A key challenge in their development is the large stress induced during the epitaxial growth of LD struc-tures,which arises from the lack of lattice-matched substrates,and severely degrades the quantum efficiency and overall LD per-formance.This study presents an in-depth investigation into the growth mode and stress evolution of thick Al0.2Ga0.8N tem-plate.Firstly,we used the compressive stress between the Al0.2Ga0.8N layer and AlN/Sapphire substrate to form spontaneously three-dimensional growth to annihilate dislocations.Secondly,based on the Nakajima's theory of elasticity,we refined the con-ventional theoretical models for AlGaN strain relaxation of the S-K growth mode and critical thickness by considering the cru-cial role of threading dislocations(TDs)in releasing compressive stress.The experimentally measured critical thickness for three-dimensional growth was consistent with the calculated results.Furthermore,a crack-free high-quality 5 μm-thick Al0.2Ga0.8N template was successfully grown on an AlN/sapphire substrate.
年，卷(期)：
2026, 47(9)
机标分类号：
F279.23
TP3
O626
在线出版日期：
2026年10月12日
