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中国物理B（英文版）
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2026年8期
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Layer-dependent local gate response in graphene-supported TaSe2 films studied by gate-tunable STM
Layer-dependent local gate response in graphene-supported TaSe2 films studied by gate-tunable STM
摘要
Gate-tunable scanning tunnelling microscopy(STM)enables direct correlation between electrostatic gating and local electronic states in two-dimensional correlated materials.Here,we investigate TaSe2 films on graphene using a home-built gate-tunable STM setup.Large-area and atomically resolved STM images reveal well-defined TaSe2 islands and an ordered charge-density-wave(CDW)superstructure.Monolayer TaSe2 shows spatially resolved scanning tunnelling spectroscopy(STS)features but a strongly suppressed gate response under back-gate voltages.In contrast,bilayer TaSe2 exhibits a richer zero-gate electronic structure and systematic bias-dependent evolution of CDW contrast.Fixed-point gate-dependent STS in the bilayer region demonstrates clear spectral-weight redistribution and low-energy feature evolution.Our results establish a feasible gate-tunable STM protocol for TaSe2/graphene heterostructures and reveal pronounced layer-dependent local gate response in correlated two-dimensional systems.
年，卷(期)：
2026, 35(8)
机标分类号：
O4
O552.6
O641.12
在线出版日期：
2026年10月21日
