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A reaction chamber assembly for a reactor for the epitaxial deposition of a semiconductor film on at least two substrates, comprising: (a) an enclosure, (b) at least two casings contained within said enclosure, (c) at least two deposition units, and (d) an insulating system. Each casing contains at least one deposition unit. Each deposition unit is provided with at least one receiving area adapted to receive a substrate holder and suitable for the epitaxial deposition of a semiconductor film on a substrate. The insulating system comprises an intermediate insulating element positioned between the at least two casings.

Probe (1) for measuring the cathodic protection potential applied to a buried metal structure comprising: a first pair of electrodes (4,5) arranged with axes H4, H5 lying on a first plane P1; a second pair of elongated electrodes (6,7) arranged with axes H6, H7 lying on a second plane (P2) perpendicular to the first plane P1; a fifth central elongated electrode (10) which has an axis H10 whose track passes through a central point C; the fifth electrode (10) is configured to be connected to the buried metal structure in order to simulate a defect of the cladding on which the measurement is to be made. A processing unit (15) calculates the value of the field DDP REAL IR Free which depends on the cathodic protection alone by eliminating the effect of the potential drop induced by the interfering electric field present in the ground and makes this value measurable with any device on the market today.

A method includes processing a substrate in a process chamber according to a recipe, wherein the substrate comprises at least one of a film or a feature after the processing. The method further includes generating a profile map of the first substrate. The method further includes processing data from the profile map using a first model, wherein the first model outputs at least one of an estimated mesa condition of a substrate support for the process chamber, an estimated lift pin location condition of the substrate support an estimated seal band condition of the substrate support, or an estimated process kit ring condition for a process kit ring for the process chamber. The method further includes outputting a notice as a result of the processing.

本发明属于镀锌件表面钝化技术领域，尤其是涉及一种可媲美六价铬色泽高耐杂质无氟三价铬彩色钝化液及其制备。主要成分为主盐、络合剂、稀土调节剂、成色剂、增色剂、辅助络合剂、缓冲盐、润湿剂。主盐包括碱式硫酸铬和乙酸铬，络合剂包括改性酒石酸、葡萄糖酸和衣康酸，稀土调节剂包括硫酸镧和无水硝酸铈，成色剂包括仲钼酸铵、酒石酸锑钾和偏钨酸铵，增色剂包括乙酰丙酮氧钒和柠檬酸铋铵，辅助络合剂包括改性二乙烯三胺五甲叉膦酸，缓冲盐包括柠檬酸和磷酸二氢钾，润湿剂包括炔二醇改性硅氧烷。制备的三价铬彩色钝化液常温即可实现钝化，具有高杂质耐受性，将膜厚提升至六价铬钝化水平，并且外观具有仿六价铬饱满色彩。

本发明涉及有色金属冶炼领域，公开了一种自动渗钛刷涂装置及渗钛方法。装置包括：浆料供应机构、旋转刷涂机构、三维运动机构。三维运动机构支撑并带动旋转刷涂机构沿竖向升降、沿围绕竖向的周向转动、绕横向于竖向的浆料输送管路的轴向摆动和/或沿浆料输送管路的轴向伸缩。本发明采用自动化旋转刷涂装置，刷头集合了自转、公转、轴向移动等多种运动功能，能够形成螺旋扫描路径，可无死角连续涂覆，渗钛效率提升3倍以上，涂层厚度偏差≤10%，质量一致性显著提高；装置集成了浆料供应循环、旋转刷涂、三维运动等功能，实现供料‑刷涂‑循环全流程自动化；该装置可调节径向压力、轴向行程、公转转速，兼容不同规格碳钢反应器，适配性高。

本发明公开了一种微纳多级异质结构的共晶高熵合金耐磨蚀涂层及其制法与应用。所述共晶高熵合金耐磨蚀涂层中化学元素组成的通式为AlaCobCrcFedNieTifNbg，所述共晶高熵合金耐磨蚀涂层包括FCC相及BCC相域，所述BCC相域分布于作为基体的FCC相内，所述BCC相域内部形成纳米尺度成分调制区，所述纳米尺度成分调制区由无序BCC相与有序B2相构成；所述共晶高熵合金耐磨蚀涂层具有微米尺度的FCC/BCC双相异质结构和纳米尺度的BCC/B2异质结构。本发明中涂层的微纳多级异质结构有利于提高涂层在海水环境中的耐蚀性和抗磨损‑腐蚀耦合损伤能力，适用于海洋装备关键部件的表面防护。

Die Erfindung betrifft ein Verfahren zum Warmbehandeln eines Stahlbands, bei dem das Stahlband (1) als Coil (2) auf einem Abhaspel (3) platziert und von diesem abgewickelt wird, wobei das abgewickelte Stahlband durch eine Beizstation (4) geführt und dabei gebeizt wird und wobei das gebeizte Stahlband anschließend auf einem Aufhaspel (5) aufgewickelt wird. Um den Einsatz induktiver Heizungen zur Erwärmung des Bandes auch im Falle spröder Materialien zu ermöglichen, sieht die Erfindung vor, dass das Stahlband (1) vor dem Eintritt in die Beizstation (4) auf eine Temperatur zwischen 50 °C und 250 °C gebracht und das so erwärmte Stahlband in einer Richtmaschine (6) gerichtet wird. Des Weiteren betrifft die Erfindung eine Vorrichtung zum Warmbehandeln eines Stahlbands.

本发明实施例中公开了一种覆铜板及镀铜方法，涉及电子增材制造技术领域；该镀铜方法，包括：步骤1、提供一基板，所述基板上形成有第一铜层；步骤2、在含氧气氛中对所述第一铜层进行热氧化处理，并在所述第一铜层上形成氧化亚铜层；步骤3、基于表面形成有所述氧化亚铜层的所述第一铜层进行化学镀铜，在所述基板上形成掺杂有氧化亚铜的第二铜层；本申请在含氧气氛中对铜层进行热氧化处理，进而在铜层表面形成薄薄的一层氧化亚铜层，后续化镀铜会直接沉积在氧化亚铜层上，因此铜晶粒不易保持仅在垂直方向上的晶格生长，反而会在氧化亚铜层的基础上呈现多向平均生长的趋势，从而提升镀铜的致密度和平整度。