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Hacker attacks that involve stimulating voltage variations in an integrated circuit package are detected by deploying a network of elementary detectors distributed across the integrated circuit package. Each detector is positioned at a respective location within the package and is configured to generate an alarm signal in response to a voltage variation occurring at that specific location. The elementary detectors include a first component and a second component (such as flip-flops) with respective outputs configured to be set to complementary binary levels. Logic circuitry is coupled to the outputs of the first and second components and is designed to generate an alarm signal when the outputs of the first and second components no longer exhibit complementary binary levels, indicating a hacker attack involving a localized voltage variation within the integrated circuit package.

An in-memory computation device has: an array (12) with a group of cells (22) indicative of a sum between the first and the second signals, optionally also as a function of at least one of first and second number of bits.

A semiconductor device including an oscillator configured to output a first signal, and circuitry configured to count a cycle number of the first signal OSC. Before the oscillator outputs an N-th (N is an integer equal to or larger than 2) cycle of the first signal, the circuitry changes a count value of the cycle number of the first signal to N.

A hard disk, a fixing device, and a hard disk module are provided. The hard disk includes a base shell, a main circuit board mounted on the base shell, a switch mounted on the main circuit board, and a triggering mechanism. The triggering mechanism includes a triggering rod. The triggering rod is slidably arranged on the base shell along a first direction. The triggering rod can move in the first direction to trigger the switch, thereby causing the main circuit board to power off the hard disk.

本发明提供一种存储器芯片测试方法及测试电路、存储器芯片、测试系统，在进行存储器芯片测试时，能通过测试平台将相应的测试命令以相同间隔多次向存储器芯片发送，以多次触发所述存储器芯片的存储阵列产生待测的目标信号，再将目标信号进行多次分频，可以不必考虑芯片引脚的驱动强度差异，选择复用存储器芯片的其他电路的芯片引脚，并根据该芯片引脚的驱动能力从分频信号中选出合适的一路作为测量信号输出给测试平台，以此得到目标信号本身的有效宽度。本发明的技术方案，在存储器芯片设计时也不必专门为存储器芯片的测试设置专用引脚，由此节省了存储器芯片的引脚资源和面积。

An oxide semiconductor 2 T0C DRAM non-volatile power-off testing circuit and verification method, relating to the technical field of information materials and devices. The testing circuit comprises an oxide semiconductor 2 T0C DRAM cell, transmission gates, an input data buffer, a current mode sense amplifier, and a bootstrap write word line driver. After a write operation of the oxide semiconductor 2 T0C DRAM cell, high-impedance nodes are introduced in the form of the transmission gates, so that the oxide semiconductor 2 T0C DRAM cell is completely powered off and isolated from an external circuit. In the present invention, non-volatility test and verification can be well performed on an oxide semiconductor 2 T0C DRAM cell, thereby broadening the application range of non-volatility of an oxide semiconductor 2 T0C DRAM, which is of great significance for the development of the oxide semiconductor 2 T0C DRAM in the post-Moore era.

Systems, methods, and devices for using distributed write records to maintain concurrency for remote data. A client device prepares to update remote data stored in a memory server that is exposed to the client device for remote memory access. Preparing to update the remote data includes allocating a region of the local memory to update the remote data and, in response to the allocation, storing a write record to the region. The write stores the update data in a data field and a location in one or more location fields. The location denotes where the update data of the write record is to be written. Furthermore, the client device, in response to storing the write record, flags the remote data as having a pending update at the location by updating metadata of the remote data.

本发明的实施方式提供能够抑制格式化处理所需的时间变长的控制装置、盘装置、控制方法以及程序。控制装置是具有记录区域的盘装置的控制装置。实施方式的控制装置具有控制器。所述记录区域具有包括多个盘扇区的第1记录区域。所述控制器构成为能够执行对所述第1记录区域所包含的所述多个盘扇区依次分配多个逻辑块地址的格式化处理。所述格式化处理包括将所述第1记录区域划分为分别包括2个以上的所述盘扇区的多个小区间。所述格式化处理包括按每个所述小区间依次进行区间格式化处理，所述区间格式化处理包括向各所述小区间内的所述盘扇区依次写入所述逻辑块地址的写处理、和依次读出通过所述写处理写入到所述盘扇区的所述逻辑块地址的读处理。

A memory cell is configured to store data and operate in an operational state or a sleep state. A first set of transistors is configured to transfer data from the data sensing node of the memory cell to a data latch node, in response to the memory cell being in the operational state. A second set of transistors is configured to latch the data at the data latch node, in response to the memory cell being in the operational state. A third set of transistors is configured to latch the data at the data latch node, in response to the memory cell being in the sleep state. The first set of transistors is further configured to transfer the data from the data latch node to the data sensing node of the memory cell, in response to the memory cell being transitioned from the sleep state to the operational state.

本公开提供了一种存储器漏电流的检测方法，方法包括：提供存储阵列，所述存储阵列包括多个存储单元，所述存储单元可操作地耦接到位线和字线；相同或相邻的字线上的相邻存储单元之间具有预设电位差；利用预设电位差产生的电子移动检测相邻存储单元之间的漏电流。在本公开中，在相邻存储单元之间设置预设电位差，预设电位差驱动高电位存储单元中的电子向低电位存储单元中移动，若相邻的两个存储单元存在漏电问题时，增大产生的漏电流的效果，以使漏电流的检测更加准确。